baw75 document number 85550 rev. 1.7, 17-aug-10 vishay semiconductors www.vishay.com 1 94 9367 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diode features ? silicon epitaxial planar diode ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? extreme fast switches mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10 k per 13" reel (52 mm tape), 50 k/box tap/10 k per ammopack (52 mm tape), 50 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code ty p e m a r k i n g remarks baw75 BAW75-TR or baw75-tap baw75 tape and reel/ammopack parameter test condition symbol value unit repetitive peak reverse voltage v rrm 35 v reverse voltage v r 25 v peak forward surge current t p = 1 s i fsm 2000 ma repetitive peak forward current i frm 450 ma forward continuous current i f 300 ma average forward current v r = 0 i fav 150 ma power dissipation l = 4 mm, t l = 45 c p tot 440 mw l = 4 mm, t l 25 c p tot 500 mw parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
www.vishay.com 2 document number 85550 rev. 1.7, 17-aug-10 baw75 vishay semiconductors for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified package dimensions in millimeters (inches): do-35 parameter test condition symbol min. ty p. max. unit forward voltage i f = 30 ma v f 1000 mv reverse current v r = 25 v i r 100 na v r = 25 v, t j = 150 c i r 100 a breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms v (br) 35 v diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 4pf reverse recovery time i f = i r = 10 ma, i r = 1 ma t rr 4ns i f = 10 ma, v r = 6 v, i r = 1 ma, r l = 100 t rr 2ns 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. (0.022) max cathode identification 1.7 (0.067) 1.5 (0.059) re v . 6 - date: 29. jan u ary 2007 doc u ment no.: 6.560-5004.02-4
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